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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *High Current Capability *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) *High Switching Speed APPLICATIONS *Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEX VCEO VEBO IC ICM IB B BDY90A PARAMETER Collector-Base Voltage Collector-Emitter Voltage(VEB= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 120 120 100 6 12 15 2 3 -15 -15 40 150 -65~150 UNIT V V V V A A A A A A W IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEX IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC=100mA ; IB=0 IC= 5A; IB= 0.5A B BDY90A MIN 100 TYP. MAX UNIT V 0.5 1.0 1.2 1.5 0.1 3.0 0.1 35 30 20 70 120 V V V V mA mA IC= 12A; IB= 1.2A IC= 5A; IB= 0.5A B IC= 12A; IB= 1.2A VCE= VCEXmax;VEB= 1.5V VCE= VCEXmax;VEB= 1.5V,TC=150 VEB= 6V; IC=0 IC= 1A ; VCE= 2V IC= 5A ; VCE= 5V IC= 12A ; VCE= 5V IC= 0.5A ; VCE= 5V;ftest= 5MHz MHz Switching Times ton ts tf Turn-On Time Storage Time Fall Time IC= 5A; IB1= -IB2=0.5A; VCC= 30V 0.35 1.3 0.2 s s s isc Websitewww.iscsemi.cn 2 |
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